SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS * N-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-to-5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 71601 17-Apr-01 www.vishay.com 1 SPICE Device Model Si4884DY Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Typical Unit Static VGS(th) VDS = VGS, ID = 250 A 1.73 V On-State Drain Current ID(on) VDS 5 V, VGS = 10 V 508 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 12 A 0.0087 VGS = 4.5 V, ID = 10 A 0.0132 Gate Threshold Voltage a a Forward Transconductance a Diode Forward Voltage Dynamic gfs VDS = 15 V, ID = 12 A 34 S VSD IS = 2.3 A, VGS = 0 V 0.74 V b Total Gate Charg Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.8 Turn-On Delay Time td(on) 10 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 15.3 VDS = 15 V, VGS = 5 V, ID = 12 A VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, RG = 6 5.8 nC 14 30 ns 52 IF = 2.3 A, di/dt = 100 A/s 44 Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71601 17-Apr-01 SPICE Device Model Si4884DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED) Document Number: 71601 17-Apr-01 www.vishay.com 3